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日本电信电话公司武藏野电气通信研究所利用电子束曝光法作成了最小尺寸为2微米的1千彼特金属氧化物半导体(MOS)存贮器用的掩膜,并在八月举行的1977年度电子通信学会半导体部门全国大会上发表。使用的电子束曝光装置为汤姆孙-CSF公司
The Temuzeko Electric Telecommunications Research Institute of Nippon Telegraph and Telephone Corporation used electron-beam lithography to create a mask for a 1-kilobit metal oxide semiconductor (MOS) memory with a minimum size of 2 micrometers. In 1977, the electronics Institute of Communications semiconductor sector at the National Assembly. The electron beam exposure device used was Thomson-CSF