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提出了一种新型微波负阻二极管。就负阻是由于载流子通过耗尽区的有限的渡越时间而引起的这一点而论,这个二极管跟里德二极管是相似的。然而,它跟里德二极管不一样,载流子是通过穿通而不是雪崩注入耗尽区的。因此,这种器件有希望具有比里德二极管好得多的噪声性能。本文首先定性地解释这种新提出器件的穿通运用,并跟早先由里德和肖克莱等人提出的类似结构进行比较。然后采用注入过程的锐利脉冲近似法得到穿通二极管的大信号导纳。计算出器件的Q值为-15。如果把这个器件作为一个微波振荡器来考虑,那么,有可能得到20％的转换效率。给出了微波功率上限的估计。本文推导出这个器件设计考虑的详细计算。给出频率范围为1～50千兆赫的数字设计例子。
A new type of microwave negative resistance diode is proposed. This diode is similar to a Reed diode in that the negative resistance is due to the limited transit time of carriers through the depletion region. However, unlike Reed diodes, charge carriers inject into the depletion region through punch-through rather than avalanche. Therefore, this device is expected to have a much better noise performance than Reed diodes. This paper first qualitatively explains the punch-through of this new proposed device and compares it to a similar structure earlier proposed by Reed and Shockley et al. Then using the sharp pulse approximation of the injection process to get through the diode large signal admittance. Calculate the Q value of the device is -15. If this device is considered as a microwave oscillator, then, it is possible to get 20% conversion efficiency. The upper limit of microwave power is given. This article deduces a detailed calculation of this device design considerations. Give examples of digital designs in the frequency range 1 to 50 gigahertz.