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应用一维化方法和有效质量近似计算了在垂直于界面的磁场作用下量子阱内类氢杂质基态和低激发态的束缚能,并考虑到GaAs和GaAlAs中电子具有不同的有效质量和不同的介电常数,所得计算结果与实验较好相符。 量子阱;;超晶格;;GaAs;;GaAlAs
By using the one-dimensional method and the effective mass approximation, we calculated the binding energies of the ground states and the low excited states of hydrogen-like impurities in the quantum wells under the magnetic field perpendicular to the interface. Considering that the electrons in GaAs and GaAlAs have different effective masses and different Dielectric constant, the calculated results are in good agreement with the experiment. Quantum well superlattice GaAs GaAlAs