论文部分内容阅读
这是一份有关大规模集成电路制造工艺的国外考察调研报告。1.硅片加工工艺a.硅片中的氧含量问题原认为硅中之氧会使加工过程中产生缺陷,因此要求氧含量越少越好。后来经过研究,发现氧有吸收金属杂质的功能,形成吸收中心。进一步的研究表明,氧含量太高也不好,如超过10~(18)/cm~3,则在PN结处吸收杂质,使结特性变环;在高温处理中,易于变形。所以,一般控制在10~(17)/cm~3左右为宜。b.硅片清洗问题
This is a research report on the overseas inspection of the manufacturing process of large scale integrated circuits. 1. Wafer processing a. Oxygen content in the silicon The original idea that oxygen in silicon will cause defects in the processing, so the less the oxygen content, the better. Later, after research, we found that oxygen has the function of absorbing metal impurities and forming an absorption center. Further studies show that the oxygen content is too high is not good, such as more than 10 ~ (18) / cm ~ 3, then absorb impurities in the PN junction, the ring characteristics of the ring; in high temperature processing, easy to deformation. Therefore, the general control of 10 ~ (17) / cm ~ 3 is appropriate. b. wafer cleaning problems