论文部分内容阅读
采用原位磷注入合成法在高压单晶炉内合成富磷的磷化铟 (In P)熔体 ,并利用液封直拉法 (LEC)生长出了 1 0 0 mm In P掺硫单晶材料。对富磷单晶分别用快速扫描光荧光谱技术、腐蚀金相法和扫描电镜进行了研究。结果表明在富磷量足够大的情况下 ,晶片上会出现孔洞 ,并对孔洞周围位错的形成原因及分布进行了分析。 1 0 0 mm In P单晶的平均位错密度也没有明显的增加 ,为今后生长更大尺寸的完整 In P单晶奠定了良好的基础
Phosphorus-doped indium phosphide (InP) melt was synthesized by in-situ phosphorus injection synthesis in a high pressure single crystal furnace. A 100 mm In P single-crystal S material. Phosphorus-rich single crystal were characterized by rapid scanning fluorescence spectroscopy, corrosive metallography and scanning electron microscopy. The results show that when the phosphorus content is large enough, holes will appear in the wafer and the formation reason and distribution of the dislocations around the holes will be analyzed. The average dislocation density of 1 0 0 mm In P single crystals has also not significantly increased, laying a good foundation for the growth of larger In P single crystals of larger size in the future