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红外电视显微镜能够对半导体材料及器件的内部结构进行无损和快速检测.本文介绍在集成电路工艺中应用这种仪器观察研究下列现象;合金化后铝条的横向铺伸现象及与合金化有关的失效机构;硅中重金属杂质及位错的分布和隔离沟区的吸附现象;硅中的各种结构缺陷的形貌;器件的电学漏电;埋层反扩散及针孔扩散等.并讨论了各种不同类型的缺陷对于电路失效的影响.
Infrared television microscope can detect the internal structure of semiconductor materials and devices non-destructively and quickly.This paper introduces the following phenomena in the application of this instrument in the process of integrated circuit: the phenomenon of lateral spreading of aluminum strip after alloying and the alloying The failure mechanisms, the distribution of heavy metal impurities and dislocations in silicon, the adsorption phenomena in isolated trench regions, the morphologies of various structural defects in silicon, the electrical leakage of devices, the anti-diffusion of buried layers and the diffusion of pinholes, Influence of Different Types of Defects on Circuit Failure.