A novel power UMOSFET with a variable K dielectric layer

• 作 者: 王颖 兰昊 曹菲 刘云涛 邵雷
• 机 构: College of Information and Communication Engineering,Harbin Engineering University,
• 出 处: Chinese Physics B
• 发表日期: 2012年06期
• 关键词: dielectric breakdown figure drift trench split doping fabrication Electron drain

A novel split-gate power UMOSFET with a variable K dielectric layer is proposed.This device shows a 36.2% reduction in the specific on-state resistance at a breakdown voltage of 115 V,as compared with the SGE-UMOS device.Numerical simulation results indicate that the proposed device features high performance with an improved figure of merit of Qg × RON and BV2/RON,as compared with the previous power UMOSFET.

A novel split-gate power UMOSFET with a variable K dielectric layer is proposed. This device shows a 36.2% reduction in the specific on-state resistance at a breakdown voltage of 115 V, as compared to the SGE-UMOS device. Numerical simulation results indicate that the proposed device features high performance with an improved figure of merit of Qg × RON and BV2 / RON, as compared with the previous power UMOSFET.