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半导体激光器与硅的原子重新排列粘合工艺对诸如Ⅲ－Ⅴ族半导体激光器和硅这种具有完全不同物理性质的材料，可用原子重新排列粘合（ＢＡＲ）技术进行金相连接。康乃尔大学工程学院和贝尔科公司研究人员之间的合作研究已证明，ＩｎＧａＡｓ／ＧａＡｓ应变量子阱激光器可与...
Atomic rearrangement of semiconductor lasers and silicon Bonding processes Materials such as Group III-V semiconductor lasers and silicon, which have completely different physical properties, can be metallurgically joined using the BAR technique. Collaborative research between Cornell Engineering School and Belcom researchers has demonstrated that InGaAs / GaAs strained quantum well lasers can be used with ...