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得到室温下具有负阻的场致发光二极管。是采用含有深受主能级锰作主要杂质的的砷化镓半导体作基底,因而是P型半导体。在砷化镓基底的表面上,再外延生长(例如气相外延)一层含有n型杂质(譬如碲)的砷化镓。当二极管加有适当电压时,这层n型区就提供称作少数载流子的电子注入高阻区。在远离掺碲区的砷化镓基底的另一个表面上,扩散锌作浅能级杂质,以获得锌占优势的掺杂区。扩散的结果是一边锌占优势,另外一边仍然锰占优势,中间形成高阻区。 室温 20℃或更低时,电压刚超过 1伏二极管呈现高阻。当达到临界击穿电压时,就出现电流随电压下降而上升的负阻。对于1伏量级的过电压,二极管电流由小变大的开关速度小于10毫微秒。
An electroluminescent diode with negative resistance at room temperature was obtained. Is a p-type semiconductor that uses a gallium arsenide semiconductor that contains deep acceptor-level manganese as a major impurity. On the surface of the gallium arsenide substrate, a layer of gallium arsenide containing an n-type impurity such as tellurium is epitaxially grown (for example, by vapor phase epitaxy). When the diode is applied with the proper voltage, the n-type region provides an electron injection high-resistance region called a minority carrier. On the other surface of the gallium arsenic substrate far away from the doped Te-doped region, zinc is diffused as a light-level impurity to obtain a zinc-doped region. As a result of the proliferation of zinc is dominant while the other side is still dominated by manganese, the middle form a high-resistance zone. At room temperature 20 ° C or lower, the voltage just exceeds 1 volt diode showing high resistance. When the critical breakdown voltage is reached, a negative resistance of the current rises as the voltage drops. For overvoltages on the order of 1 volt, the diode current switches from small to small switching speeds of less than 10 ns.