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本文报导用石墨舟液相外延纯度砷化镓材料的电学性质。在氢中含氧量为0.12×10~(-6)的条件下,获得的较好生长层的电学参数为μ_(77)~K=9.41×10~4～1.22×10~5厘米~2/伏·秒,n_(77)K=3.77×10~(13)～4.53×10~(14)厘米~(-3)。另外,研究了系统漏气及氢中含氧量对浅施主浓度N_D、熔融KOH腐蚀坑密度和生长层表面氧化膜的影响以及这些参数间的相互关系。 根据生长层的电学性质,计算了室温迁移率的计算值与实测值之差Δμ300K。发现,后者随N_D增加而降低,恰与前一文报导的用石英舟液相外延的情况相反。由此推测,在本文实验条件下,迁移率刽子手的本性也与前文有所不同,而以碳或碳化物较为可能。
This article reports the electrical properties of gallium arsenide materials using graphite boat epitaxial liquid phase epitaxy. Under the condition of hydrogen content of 0.12 × 10 ~ (-6), the electrical parameters of the preferred growth layer are μ_ (77) ~ K = 9.41 × 10 ~ 4 ~ 1.22 × 10 ~ 5cm ~ 2 / Volt · second, n_ (77) K = 3.77 × 10 ~ (13) ~ 4.53 × 10 ~ (14) cm ~ (-3). In addition, the effects of system leakage and oxygen content in hydrogen on the shallow donor concentration N_D, the density of molten KOH corrosion pits and the oxide film on the surface of the growth layer, and the correlation between these parameters were investigated. According to the electrical properties of the growth layer, the difference Δμ300K between the calculated value and the measured value of the room temperature mobility was calculated. It was found that the latter decreases with an increase of N_D, as opposed to the situation reported by the previous paper using liquid-phase epitaxy of quartz vessels. Therefore, it is speculated that under the experimental conditions in this paper, the mobility of executioner is also different from the previous one, but carbon or carbide is more likely.