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报道Ge在Ru(0 0 0 1)表面上生长以及相互作用行为的扫描隧道显微镜 (STM)和x射线光电子能谱 (XPS)研究 .STM的实验结果表明Ge在Ru(0 0 0 1)表面的生长呈典型的Stranski_Krastanov生长模式 ,Ge的覆盖度小于单原子层时呈层状生长 ,而从第二层开始呈岛状生长 .XPS测量显示衬底Ru(0 0 0 1)与Ge的相互作用很弱 .Ru(0 0 0 1)表面的Ru 3d5 2 和Ru 3d3 2 芯态结合能分别处于 2 79 8和 2 84 0eV .随着Ge的生长 ,到Ge层的厚度为 2 0个单原子层 ,衬底Ru 3d芯态结合能减小了约 0 2eV ,而Ge 3d芯态结合能从Ge低覆盖度时的 2 8 9eV增加到了 2 9 0eV ,其相对位移约为 0 1eV .
The scanning tunneling microscopy (STM) and x-ray photoelectron spectroscopy (XPS) studies on the growth and interaction of Ge on the Ru (0 0 0 1) surface were reported. The experimental results of STM show that Ge is deposited on the surface of Ru Shows a typical Stranski_Krastanov growth pattern with Ge coverage of less than that of the monatomic layer and island growth from the second layer.XPS measurements show that the interaction between the substrate Ru (0 0 0 1) and Ge The binding energies of Ru 3d5 2 and Ru 3d3 2 on the surface of Ru (0 0 0 1) are respectively 2 79 8 and 2 84 0 e V. With the growth of Ge, the thickness of the Ge layer is 20 At the atomic layer, the Ru 3d bond energy of the substrate can be reduced by about 0.2 eV, while the Ge 3d bond energy can increase from 295 eV at Ge low coverage to 2900 eV with a relative displacement of about 0.1 eV.