AlGaN solar‐blind APD with low breakdown voltage

• 作 者: Kexiu Dong Dunjun Chen Yangyi
• 机 构: SchoolofElectronicandElectricalEngineering,CollegeofPhysicsandElectronicInformation,KeyLaboratoryofA
• 出 处: 光电工程
• 发表日期: 2017年4期
• 关键词: 光电二极管 击穿电压 光子晶体 抗反射涂层 AlGaN avalanche photodiodes solar-blind
• 基金项目: supported by Anhui University Natural Science Research Project, China （KJ2015A153）, Initial research fund from Chuzhou University, China （2014qd024）, The Higher Education Excellent Youth Talents Found

A p-i-i-n type AlG a N heterostructure avalanche photodiodes(APDs)is proposed to decrease the avalanche breakdown voltage and to realize higher gain by using high-Al-content AlG aN layer as multiplication layer and low-Al-content AlG aN layer as absorptio