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通过磁控溅射Al掺杂的ZnO陶瓷靶,在p-Si片上沉积n型电导的ZnO薄膜而制备了ZnO/p-Si异质结,并通过测试其光照下的I-V、C-V特性对其光电特性以及载流子输运特性与导电机理进行了研究。研究表明ZnO/p-Si异质结存在良好的整流特性与光电响应,可以广泛应用在光电探测和太阳电池等领域。由于在ZnO/p-Si异质结界面处的导带补偿与价带补偿相差太大的缘故,在正向电压超过1V时,导电机理为空间电荷限制电流导电。同时,研究表明ZnO/p-Si异质结界面存在大量界面态,可以通过减小界面态进一步提高其光电特性。
The ZnO / p-Si heterojunction was prepared by magnetron sputtering Al-doped ZnO ceramic target and the n-type conductivity ZnO film was deposited on the p-Si wafer. The ZnO / p-Si heterojunction was prepared by measuring its IV and CV characteristics Photoelectric properties, carrier transport characteristics and conduction mechanism were studied. The results show that the ZnO / p-Si heterojunction has good rectifying properties and photoelectric response and can be widely used in the fields of photoelectric detection and solar cell. Since the conduction band compensation at the ZnO / p-Si heterojunction interface is much different from the valence band compensation, the conduction mechanism is space charge-limited current conduction at a forward voltage above 1V. At the same time, the research shows that ZnO / p-Si heterojunction interface has a large number of interface states, which can further improve the photoelectric properties by reducing the interface state.