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建立了MOS控制晶闸管最大可关断电流的解析关系式 .在该关系式中 ,关断电流只与晶闸管中耦合晶体管的电流放大系数及晶闸管射极短路电流有关 .另外 ,基于MOS控制晶闸管的仿真模型 ,模拟分析了最大可关断电流与它们间的关系 .解析与模拟分析结果符合较好 .结果表明 ,耦合晶体管电流放大系数及晶闸管射极短路电流的设计决定了器件的最大可关断电流 .
In this relationship, the turn-off current is only related to the current amplification factor of the coupling transistor in the thyristor and the thyristor emitter short-circuit current. In addition, the simulation based on the MOS control thyristor Model and simulation analysis of the maximum turn-off current and their relationship between the analytical and simulation results in good agreement.The results show that the coupling transistor current amplification factor and the thyristor emitter short-circuit current design determines the maximum turn-off current .