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采用自助熔融法制备了高质量的In掺杂Bi_2Se_3(Bi_(2-x)In_xSe_3)单晶样品。研究了In掺杂对Bi_2Se_3样品的晶体结构、微观形貌及电输运性能的影响。结果表明:在Bi_(2-x)In_xSe_3样品中,In基本以替代Bi位的形式存在。随着In掺杂量的增加,样品晶格常数c减小,层状结构更加明显且堆叠层数增多。样品的电阻率随着In掺杂量的增加而明显增大,这可能跟掺杂样品内电离杂质的散射的贡献增大有关。另外,Bi_(2-x)In_xSe_3样品的磁电阻大小也与In掺杂量呈正相关关系,这是由于在In掺杂的样品中,In掺杂使得样品中声子散射效应增加,导致了体系中的磁电阻值增大。
High quality In-doped Bi_2Se_3 (Bi 2-x) In_xSe_3 single crystal samples were prepared by self-melting method. The effect of In doping on the crystal structure, microstructure and electrical transport properties of Bi_2Se_3 samples was investigated. The results show that in the Bi_ (2-x) In_xSe_3 sample, In is basically present in the place of the Bi site. With the increase of In doping amount, the lattice constant c decreases, the layered structure becomes more obvious and the number of stacked layers increases. The resistivity of the sample increases with the increase of In doping amount, which may be related to the increased contribution of the scattering of ionized impurities in the doped sample. In addition, the magnetoresistance of the Bi_ (2-x) In_xSe_3 samples also has a positive correlation with the In doping amount, which is due to the increase of the phonon scattering effect in the samples due to In doping in the In-doped samples, In the magnetic resistance increases.