Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation

来源 :核技术：英文版 | 被引量 : 0次 | 上传用户：shadowyin

【摘要】

：

This article is about the absorbed-dose-dependent threshold voltage shift of the MOSFET transistors.Performance of the MOSFETs has been tested in different gate

【作者】

：

Saleh Ashrafi Baharak Eslami

【机构】

：

FacultyofPhysics,DepartmentofPhysics

【出处】

：

核技术：英文版

【发表日期】

：

2016年6期

【关键词】

：

阈值电压漂移 MOSFET Γ射线照射敏感性商业吸收剂量偏置电压晶体管 Dosimetry. Gamma radiation. 137Cs Act

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This article is about the absorbed-dose-dependent threshold voltage shift of the MOSFET transistors.Performance of the MOSFETs has been tested in different gate voltages.Sensitivity of the transistors for 662 ke V gamma ray is studied in 1–5 Gy dose range

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Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation

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