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采用电子背散射衍射(EBSD)和透射电子显微镜(TEM)对冷拔<110>单晶铜的织构和微观组织进行了分析.为了考察初始取向对冷拔铜线材形变组织和织构的影响,<110>试验结果并与冷拔<100>和<111>单晶铜的结果进行了对比.发现与<100>和<110>单晶铜相比,<110>单晶铜晶粒分裂更加明显,在冷拔过程中迅速形成<100>+<111>织构.但高应变下,由于剪切应力的影响,<100>和<111>织构组分沿线材径向的分布并不均匀,<100>织构绝大部分分布在试样表面,<111>则主要分布于试样中心.冷拔<110>单晶铜的微观组织研究结果表明,在低应变情况下,可表征为两类非晶体学几何必须位错界面,随变形量的增加,大量S带开始出现,高应变时,绝大部分位错界面已与冷拔方向平行,形成薄片状组织.与<100>和<111>单晶铜相比,冷拔<110>单晶铜的几何必须位错界面的平均失配角和平均间距更大.由于<110>单晶铜中同一织构组分内仍能形成高角度界面,在位错界面失配角分布图中很快形成双峰分布.
The texture and microstructure of cold drawn <110> single crystal copper were analyzed by electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) .In order to investigate the influence of initial orientation on the texturing microstructure and texture of cold drawn copper wire , <110> and compared with the results of cold drawn <100> and <111> single crystal copper. <110> Single crystal copper grains were found to be cleaved as compared to <100> and <110> More obviously, <100> + <111> texture is rapidly formed during cold drawing, but under high strain, due to the influence of shear stress, the distribution of <100> and <111> In the case of <110> single crystal copper, the microstructure of cold drawn <110> single crystal copper shows that at low strain, Characterized by two types of non-crystallographic geometry must be dislocation interface, with the increase of deformation, a large number of S-band began to appear, the high strain, most of the dislocation interface has been parallel with the cold drawing direction, the formation of thin slices. <100 > The average mismatch angle and the average pitch of geometrically dislocated interface of cold drawn <110> single crystal copper are greater than that of <111> single crystal copper. The formation of high-angle interface can still be formed within the composition, and the bimodal distribution is rapidly formed in the mismatch angle distribution diagram of the dislocation interface.