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新型压电晶体La3Ga5SiO1 4因其低声速、零温度切向和良好的高温稳定性受到关注 ,但是昂贵的Ga2 O3原料阻碍了它的工业应用。通过离子置换可获得具有langasite结构的多种新型压电晶体。综述介绍了置换La,Ga ,Si形成的新型压电晶体的最新研究进展 ,比较分析了不同晶体的优势及其存在的问题。在这些新晶体中 ,由于Sr3Ga2 Ge4 O1 4(SGG)具有熔点较低、性能较高的综合优势 ,它有可能成为新一代表面波器件的重要侯选材料。与提拉法相比 ,采用坩埚密封的下降法生长SGG单晶 ,可以显著提高晶体产率 ,降低成本
The new piezoelectric La3Ga5SiO1 4 has drawn attention due to its low speed of sound, zero temperature tangential and good high temperature stability, but expensive Ga2O3 raw materials have hindered its industrial application. A variety of novel piezoelectric crystals with langasite structure are obtained by ion displacement. The latest research progress of new piezoelectric crystals substituted by La, Ga and Si is introduced. The advantages and problems of different crystals are compared and analyzed. Among these new crystals, Sr3Ga2Ge4O1 4 (SGG) is likely to be an important candidate for next-generation surface wave devices because of its lower melting point and higher performance. Compared with the Czochralski method, the SGG single crystal growth by the crucible sealing descent method can significantly improve the crystal yield and reduce the cost