论文部分内容阅读
报道了用光子能量低于GaAs禁带宽度的红外激光脉冲,触发电极间隙为3mm和8mm的半绝缘GaAs光电导开关的实验结果。使用单脉冲能量为1.9mJ的1064nmNd:YAG激光触发开关,在偏置电压分别为3kV和5kV条件下,光电导开关分别工作于线性和非线性模式。用900nm半导体激光器和1530nm掺铒光纤激光器分别进行触发实验,得到了重复频率分别为5kHz和20MHz的电脉冲波形。结果表明,半绝缘GaAs光电导开关可以吸收大于本征吸收限波长红外激光脉冲。
The experimental results of semi-insulating GaAs photoconductive switches with 3mm and 8mm electrode gaps triggered by infrared laser pulses with photon energies below the GaAs bandgap were reported. Using single-pulse energy of 1.9mJ 1064nmNd: YAG laser trigger switch, respectively, in the bias voltage of 3kV and 5kV conditions, the photoconductive switch in linear and non-linear mode. Trigger experiments were carried out with 900nm semiconductor laser and 1530nm erbium-doped fiber laser respectively. The electrical pulse waveforms with repetition frequency of 5kHz and 20MHz respectively were obtained. The results show that the semi-insulating GaAs photoconductive switch can absorb more than the intrinsic absorption wavelength infrared laser pulse.