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随着硅微波低噪声接收器件向更高频率、低噪声、高可靠性等方面发展,相应对硅外延材料提出了新的要求.它们要求材料的表面浓度低、外延层厚度薄.而且理论和实验上指出,相同的薄层,若外延层表面浓度控制得更低,器件电学参数将能进一步提高.由此可见,亚微米薄层生长技术的研究不仅是一种材料的基础研究,而且在需要薄层材料的器件研制方面有着很大的现实意义.
With the development of silicon microwave low-noise receiver devices to higher frequency, low noise and high reliability, new requirements have been put forward for silicon epitaxial materials, which require low surface concentration of materials and thin epitaxial layers, and the theoretical and Experimental results show that the same thin layer, if the epitaxial layer surface concentration control lower device electrical parameters will be able to further improve.Thus, the sub-micron thin layer growth technology research is not only a basic material, but also in There is great practical significance in the development of devices that need thin-layer materials.