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用高功率密度的CWCO_2激光扫描在硅中引入了较单纯清洁的位错,并利用DLTS技术对其深能级谱进行了测量.在p型和n型硅中分别测到 E_v+0.33eV和 E_c-0.37eV,E_c-0.50eV三个深能级谱峰.实验结果表明,位错线上的断键是重构的,重构后只有少部分位错态是电活性的.氢等离子体退火对电活性的位错态有显著的钝化作用.
The higher power density CWCO_2 laser scanning introduces a simpler clean dislocation in silicon and the DLTS technique was used to measure the deep energy spectrum.E_v + 0.33eV and E_c-0.37eV and E_c-0.50eV.The experimental results show that the broken bonds on the dislocation line are reconstructed, and only a few dislocation states are electrically active after the reconstruction.Hydrostatic plasma Annealing has a significant passivation effect on the dislocation of electro-activity.