Band offsets between amorphous La_2Hf_2O_7 and silicon

• 作 者: 程学瑞 王永强 戚泽明 张国斌 王玉银 邵涛 张文华
• 机 构: Department of Technology and Physics, Zhengzhou University of Light Industry,National Synchrotron Ra
• 出 处: Journal of Rare Earths
• 发表日期: 2012年08期
• 关键词: amorphous conduction valence pulsed synchrotron sputtering offset candidate inte

Amorphous La2Hf2O7 films were grown on Si(100) by pulsed laser deposition method. The valence and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy. The energy band gap of amorphous La2Hf2O7 film was measured from the energy-loss spectra of O 1s photoelectrons. The band gap of amorphous La2Hf2O7 film was determined to be 5.4±0.2 eV. The valence and the conduction-band offsets of amorphous La2Hf2O7 film to Si were obtained to be 2.7±0.2 and 1.6±0.2 eV, respectively. These results indicated that the amorphous La2Hf2O7 film could be one promising candidate for high-k gate dielectrics.

The valence and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy. The energy band gap of amorphous La2Hf2O7 film was measured from the energy The band gap of the amorphous La2Hf2O7 film was determined to be 5.4 ± 0.2 eV. The valence and the conduction-band offsets of the amorphous La2Hf2O7 film to Si were obtained to be 2.7 ± 0.2 and 1.6 ± 0.2 eV , respectively. These results indicated that the amorphous La2Hf2O7 film could be one promising candidates for high-k gate dielectrics.