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日本富土通实验室提出了一种新型异质结InGaAsP/InP激光器,即双重载流子限制(DCC)异质结激光器的工作原理并已得到实验证实。通过把一个P-InGaAsP第二势阱层,插进到通常的InGaAsP/InP双异质结激光器中的InP包层内制造了这种激光器。这种激光器阈值电流的温度稳定性极好[阈值电流按exp(T/T_0)变化时,在20～100℃的温度范围内,T_0=180K],而且微分量子效率很高(在100℃下η>45％)。垂直于结平面的光束发散特性亦有很大改进(θ_L<25°)
Fujitsu Laboratories of Japan proposed a new type of heterojunction InGaAsP / InP laser, that is, the working principle of a dual carrier-limited (DCC) heterojunction laser has been experimentally confirmed. This laser was fabricated by inserting a P-InGaAsP second potential well layer into an InP cladding in a typical InGaAsP / InP double heterostructure laser. This laser threshold current has excellent temperature stability (T_0 = 180K over a temperature range of 20 ° C to 100 ° C when the threshold current changes by exp (T / T_0)], and the differential quantum efficiency is very high (at 100 ° C η> 45%). The beam divergence perpendicular to the junction plane is also greatly improved (θ_L <25 °)