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为了实现与现有集成电路工艺兼容的全硅基发光器件,提出了一种新型硅基垂直腔面光发射器件结构。它采用等离子体增强化学气相淀积(PECVD)方法制备的非晶硅(或非晶氮化硅)/二氧化硅交替生长的多层薄膜结构为分布式Bragg反射器(DBR),以夹在上下两个Bragg反射器之间的非晶碳化硅薄膜为中间发光层。通过设计与模拟,分析了DBR中薄膜生长顺序与层数对器件性能的影响。最后研制出光致红光发射器件和电致蓝绿光发射器件,并给出了它们的光致和电致发光谱。结果显示了在光致和电致激发下非晶碳化硅的发光和DBR对光谱的限制增强作用。
In order to realize the all-silicon-based light-emitting device compatible with the existing integrated circuit technology, a novel structure of the silicon-based vertical cavity surface light-emitting device is proposed. The multilayer thin film structure of alternating amorphous silicon (or amorphous silicon nitride) / silicon dioxide prepared by the plasma enhanced chemical vapor deposition (PECVD) method is a distributed Bragg reflector (DBR) sandwiched between The amorphous silicon carbide film between the upper and lower Bragg reflectors is an intermediate light-emitting layer. Through the design and simulation, the influence of film growth sequence and layer number on the device performance is analyzed. Finally, a photo red emitting device and an electroluminescent blue emitting device are developed, and their photoluminescence and electroluminescence spectra are given. The results show that the luminescence of amorphous silicon carbide and the limiting enhancement of DBR under photo- and electron-induced excitation enhance the spectrum.