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分析了AlGaAs/GaAs/AlGaAs渐变异质结的光致发光特性。根据理论及仿真结果,确定了GaAs发光的最优能带结构为双异质结P-AlGaAs/P-GaAs/P-AlGaAs或者N-AlGaAs/NGaAs/N-AlGaAs,并且异质结两边能带渐变。基于所选结构,研究了能带渐变及层宽对发光效率的影响。研究结果表明,外体区吸收层的能带渐变,且外体区激发层的能带不变,发光区域的载流子最多,发光能量值最大。激励光源的波长不同,各层有不同的最优宽度,为器件的整体优化提供了依据。AlGaAs/GaAs/AlGaAs渐变异质结的光致发光研究为高效率器件如太阳电池、发光二极管等的实用化设计、研制提供了有价值的参考。
The photoluminescence characteristics of AlGaAs / GaAs / AlGaAs graded heterojunction were analyzed. According to the theoretical and simulation results, the optimal band structure of GaAs is determined to be double heterostructure P-AlGaAs / P-GaAs / P-AlGaAs or N-AlGaAs / NGaAs / N-AlGaAs. Gradient. Based on the selected structure, the effect of bandgap and layer width on the luminous efficiency was studied. The results show that the energy band of the absorption layer in the outer region is gradually changed, and the energy band of the excitation layer in the outer region remains the same. The carriers in the light emitting region have the largest number of carriers and the maximum energy of light emission. The wavelength of the excitation light source is different, and each layer has different optimal width, which provides the basis for the overall optimization of the device. The photoluminescence study of AlGaAs / GaAs / AlGaAs graded heterojunction provides a valuable reference for the practical design and development of high efficiency devices such as solar cells and light-emitting diodes.