Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

• 作 者: 朱青 马晓华 陈伟伟 侯斌 祝杰杰 张濛 陈丽香 曹艳荣 郝跃
• 机 构: School of Advanced Materials and Nanotechnology Xidian University,Key Laboratory of Wide Band-Gap Se
• 出 处: Chinese Physics B
• 发表日期: 2016年06期
• 关键词: AlGaN utilized filling capture capacitance thick Schottky doping depletion captu

Deep level transient spectroscopy(DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors(HEMTs) has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energies of E_v + 0.47 eV,and E_v + 0.10 eV are observed,which are related to surface states.The electron traps with active energies of E_c-0.56 eV are located in the channel,those with E_c-0.33 eV and E_c-0.88 eV are located in the AlGaN layer.The presence of surface states has a strong influence on the detection of electron traps,especially when the electron traps are low in density.The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN / GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. traps with active energies of E_v + 0.47 eV, and E_v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E_c-0.56 eV are located in the channel, those with E_c-0.33 eV and E_c -0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.