论文部分内容阅读
本文提出一个亚90nm沟道MOSFET在亚阈值状态下的二维电势和阈值电压的半解析模型.文章首先根据短沟道MOSFET在亚阈值状态下的物理模型提出定解问题,然后用特征函数将由氧化层和空间电荷区衔接条件所得到的超越方程组作正交展开,得到关于未知量的线性代数方程组,求出了氧化层和空间电荷区的二维电势、耗尽层厚度和阈值电压的表达式.该模型不需要适配参数,运算量小,避免了方程离散化,计算精度与数值解精度相同.文章给出了沟道长度为90nm以下MOSFET的电势分布、表面势、耗尽层厚度和阈值电压计算结果,计算值与二维数值模拟值高度吻合.
This paper presents a semi-analytical model of two-dimensional potential and threshold voltage of sub-90nm channel MOSFETs in subthreshold states.Firstly, based on the physical model of short-channel MOSFETs in sub-threshold state, Oxide layer and the space charge zone convergence conditions obtained by the orthogonal equations for orthogonal expansion, the unknown algebraic linear algebraic equations are obtained, the oxide layer and the space charge region of the two-dimensional potential, depletion layer thickness and threshold voltage The model does not need fitting parameters, the calculation is small, avoiding the discretization of the equation, the calculation accuracy and numerical solution accuracy are the same.The article gives the potential distribution, surface potential and depletion of MOSFET with channel length of 90nm Layer thickness and threshold voltage calculation results, the calculated value is in good agreement with the two-dimensional numerical simulation value.