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本文中,我们介绍了一般的按比例缩小理论,该理论在电场分布形状始终保持一定时,允许独立地按比例缩小场效应晶体管的物理尺寸和电源电压。这样,虽然电场强度允许增加,二维效应仍可控。由此而产生的设计的灵活性,使室温或液氮温度下的0.25微米沟道长度的场效应晶体管的设计变得可能。然后详细研究了按比例缩小理论的物理极限,得出下述结论:0.25微米沟道长度情况下,场效应晶体管未达到其极限极能。只要某些工艺取得突破,将来有可能进一步改进。
In this paper, we introduce a general scaling-down theory that allows the physical dimensions and supply voltages of field-effect transistors to be independently scaled down when the shape of the electric field distribution is always constant. In this way, although the electric field strength allows to increase, two-dimensional effect is still controllable. The resulting design flexibility has enabled the design of field-effect transistors of 0.25 micron channel length at room or liquid nitrogen temperatures. The physical limits of the theory are then scaled down in detail and the conclusion is drawn that the field effect transistor does not reach its ultimate pole potential at a 0.25 micron channel length. As long as certain technology breakthroughs, in the future may be further improved.