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提出用非线性电流源法分析微波ＧａＡｓ ＭＥＳＦＥＴ振荡器单边带相位噪声特性的新方法。给出了包含ＭＥＳＦＥＴ完整非线性噪声模型在内的振荡器相位噪声分析模型，在此基础上利用改进的非线性电流源法分析了振荡器的单边带相位噪声特性。ＣＡＤ分析与实验结果表明，此法可精确有效地分析振荡器输出基波及各次谐波附近的近载相位噪声分布特性，且适用于非线性微波ＣＡＤ。
A new method to analyze the phase noise characteristics of single-sideband GaAs MESFET oscillator by using nonlinear current source is proposed. An analysis model of oscillator phase noise including the complete nonlinear noise model of MESFET is given. Based on this, an improved non-linear current source method is used to analyze the single-sideband phase noise of the oscillator. The results of CAD analysis and experiment show that the proposed method can accurately and effectively analyze the near-phase phase noise distribution characteristics of fundamental and near-harmonic oscillators and is suitable for nonlinear microwave CAD.