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采用0.18μm SiGe BiCMOS工艺设计实现了一款用于3GPP WCDMA 850/2100(band-I/band-V)的双频单芯片功率放大器(PA)。PA采用单端共射级3级级联的结构,具有带模拟开关的片上偏置电路,通过控制偏置电流对两个PA工作状态进行切换。制造的芯片面积为1.82 mm×2.83 mm,片上集成了开关电路、偏置电路和输入匹配、级间匹配电路。在3.3 V电源电压下测试结果表明,对于band-V(CLR)频段,PA的线性输出功率P1 dB为28.6 dBm,5 dBm输入时,功率附加效率PAE,为34%。对于band-I(IMT)频段,PA的P1 dB为26.3 dBm,PAE为31%。
A 0.18μm SiGe BiCMOS process design has been implemented as a dual-band single-chip power amplifier (PA) for 3GPP WCDMA 850/2100 (band-I / band-V). PA single-ended cascading cascade structure with three cascaded, with analog switch on-chip bias circuit, by controlling the bias current to switch the working status of the two PA. Chip area of 1.82 mm × 2.83 mm, integrated on-chip switching circuit, the input bias circuit and match, matching circuit between stages. The test results at 3.3 V supply voltage show that the PA’s linear output power P1 dB is 28.6 dBm for the band-V (CLR) band and is 34% for a 5 dBm input power added efficiency PAE. For band-I (IMT) bands, PA has a dB of 26.3 dBm and a PAE of 31%.