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The nanocrystai-Si quantum dot (nc-Si QD) floating gate MOS structure is fabricated by using plasma-enhanced chemical vapour deposition (PECVD) and fuace oxidation technology.The capacitance hysteresis in capacitancevoltage (C - V) measurements confirm the charging effect of nc-Si QDs.Asymmetric charging current peaks both for electrons and holes have been observed in current-voltage (I - V) measurements at room temperature for the first time.The characteristic and the origin of these current peaks in this nc-Si QD MOS structure is investigated systematically.Moreover,the charge density (10-7 C/cm2) calculated from the charging current peaks in the I - V measurements at different sweep rates shows that each quantum dot is charged by one carrier.The difference of charging threshold voltages between the electrons and holes charging peaks,△VG,can be explained by the quantum confinement effect of the nc-Si dots in size of about 3.5 nm.