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在12～20千兆赫的频率范围内研究了肖特基势垒栅砷化镓场效应晶体管。最大有用功率增益的测量表明,在这个范围内,器件具有比预期更高的增益。用带线技术制成了输出功率为4毫瓦的17千兆赫振荡器和功率增益为16分贝的四级14.9千兆赫放大器。
Schottky barrier gate-type GaAs field-effect transistors have been investigated in the 12-20 GHz frequency range. Measurement of the maximum useful power gain shows that in this range, the device has higher gain than expected. A 17 gigahertz oscillator with 4 milliwatts of output and a four 14.9 gigahertz amplifier with 16 dB of power gain were made using tape technology.