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为研究高频低功率双极型晶体管在静电放电电磁脉冲下的损伤机理,分别采用静电放电试验法、软件仿真法以及微观失效分析法,对高频低功率双极型晶体管3DG81B进行静电放电试验,建立双极型晶体管的仿真模型,分别模拟静电放电电磁脉冲从EB结和CB结注入的整个过程,并通过微观分析来分析其失效机理。结果验证了高频低功率双极型晶体管对静电放电电磁脉冲的最敏感端对为CB结;同时还发现该类晶体管的损伤是由热二次击穿导致的热致损伤,最终导致晶体管局部区域发生融化而损坏,其损伤时的失效模式表现为电参数漂移、短路以及功能性失效。
In order to study the damage mechanism of high-frequency low-power bipolar transistors under electrostatic discharge (EMF) electromagnetic discharge, electrostatic discharge test, software simulation and microscopic failure analysis methods were respectively used to test the electrostatic discharge of high frequency low power bipolar transistor 3DG81B , The simulation model of bipolar transistor was established, the whole process of EB injection and CB junction injection were simulated respectively, and the failure mechanism was analyzed by microscopic analysis. The results show that the high-frequency low-power bipolar transistor electrostatic discharge electromagnetic pulse of the most sensitive to the end of the CB junction; also found that the damage of this type of transistor is caused by thermal damage caused by thermal damage, eventually leading to the transistor The region melted and damaged, and the damage modes of failure showed electrical parameter drift, short circuit and functional failure.