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以CH4,CF4,N2为源气体,用RF-PECVD法,通过改变N2流量制备了一批掺氮氟化非晶碳(a-C∶F∶N)薄膜样品。分析了氮掺杂对薄膜微观结构的影响。研究发现:掺氮后薄膜表面更均匀致密,均方粗糙度(RMS)由未掺氮的2.553 nm降为1.406 nm。FTIR测试表明掺氮后薄膜中出现了C=N及C≡N,随着氮流量的增加,1 620 cm-1附近吸收峰往高频移动,CFx基团含量下降,C=C基团含量上升。Raman光谱分析表明:随着氮流量的增加,D峰与G峰强度之比由未掺氮时的1.461增加到了掺氮后的2.545,薄膜内sp2键态含量增加,即芳香环式结构比例上升。结果表明:掺氮能有效增强a-C∶F薄膜交联结构,从而提高薄膜热稳定性。
A series of samples doped with nitrogen-doped fluorinated amorphous carbon (a-C: F: N) films were prepared by changing the N2 flow rate by RF-PECVD using CH4, CF4 and N2 as source gases. The effects of nitrogen doping on the microstructure of the films were analyzed. The results show that the surface of the thin film is more uniform and compact after being doped with nitrogen, and the mean square roughness (RMS) is reduced from 2.553 nm which is not doped with nitrogen to 1.406 nm. The results of FTIR showed that C = N and C≡N appeared in the films doped with nitrogen, and the absorption peak near 1 620 cm-1 shifted to high frequency with the increase of nitrogen flow rate, the content of CFx group decreased and the content of C = C group rise. Raman spectroscopy analysis showed that with the increase of nitrogen flow, the ratio of D peak to G peak intensity increased from 1.461 without nitrogen to 2.545 with nitrogen addition, and the content of sp2 in the film increased, that is, the ratio of aromatic ring structure increased . The results show that nitrogen can effectively enhance the cross-linked structure of a-C: F film and improve its thermal stability.