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本文报道一种新型二维电子气异质结双极型晶体管(2DEG HBT)的实验结果。所谓2DEG HBT指的是采用宽禁带发射极材料的异质结双极型晶体管(HBT),由于发射结导带差等原因在异质结界面处形成二维电子气层,从而降低了对异质结界面态的要求,实现使用常规工艺来制作宽禁带发射极异质结晶体管。目前这一工作主要在硅材料上进行,利用重掺杂N型氢化非晶硅(N~+a-Si:H)作宽禁带发射极材料,在单晶硅上制作2DEG HBT。实验样管电流增益h_(FE)=120(V_(CE)5V,I_C=80mA),基区电阻5kΩ/□,表面浓度1.8×10~(18)cm~(-3)。
This paper reports the experimental results of a novel two-dimensional electron gas heterojunction bipolar transistor (2DEG HBT). The so-called 2DEG HBT refers to a heterojunction bipolar transistor (HBT) using a wide bandgap emitter material, which forms a two-dimensional electron gas layer at the heterojunction interface due to poor emission conduction band, Heterojunction interface state requirements, the use of conventional processes to achieve wide band gap emitter heterojunction transistor. Currently, this work is mainly conducted on silicon materials. 2DEG HBT is fabricated on single crystal silicon by using heavily doped n-type hydrogenated amorphous silicon (N ~ + a-Si: H) as a wide band gap emitter material. The current gain of the experimental sample h_ (FE) = 120 (V_ (CE) 5V, I_C = 80mA), the base resistance is 5kΩ / □ and the surface concentration is 1.8 × 10 ~ (18) cm ~ (-3).