Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination

• 作 者: 张倩 张玉明 张义门
• 机 构: Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices,School of Microelectronics,Xidia
• 出 处: 半导体学报
• 发表日期: 2010年07期
• 关键词: breakdown termination bipolar junction realistic blocking optimizing maintaining

According to the avalanche ionization theory,a computer-based analysis is performed to analyze the structural parameters of single-and multiple-zone junction termination extension(JTE) structures for 4H-SiC bipolar junction transistors(BJTs) with mesa structure.The calculation results show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability.The influences of the positive and negative surface or interface states on the blocking capability are also shown.These conclusions have a realistic meaning in optimizing the design of a mesa power device.

According to the avalanche ionization theory, a computer-based analysis is performed to analyze the structural parameters of single-and multiple-zone junction termination extensions (JTE) structures for 4H-SiC bipolar junction transistors (BJTs) with mesa structure. show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability. These influences of the positive and negative surface or interface states on the blocking capability are also shown. These conclusions have a realistic meaning in optimizing the design of a mesa power device.