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我们利用分子束外延方法生长了低温ＧａＡｓ薄膜，并应用Ｘ射线双晶衍射、ＴＥＭ等手段对其进行了初步研究．发现原生样品和树底之间存在晶格失配．随着退火温度的上升，晶格失配逐渐消失．ＴＥＭ观察到６００，７００，８５０℃退火后的样品中存在大量的砷沉淀物．沉淀物大致呈球形．砷沉淀物的直径随着退火温度的上升而线性地增大，而密度却随退火温度的上升指数地下降．
We use molecular beam epitaxy growth of low-temperature GaAs thin film, and the application of X-ray double crystal diffraction, TEM and other means to conduct a preliminary study. There was a lattice mismatch between the native sample and the tree bottom. As the annealing temperature increases, the lattice mismatch gradually disappears. TEM showed that a large amount of arsenic was present in the samples annealed at 600, 700, and 850 ° C. The precipitate is roughly spherical. The diameter of arsenic precipitates increases linearly with increasing annealing temperature, whereas the density decreases exponentially with increasing annealing temperature.