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铝酸锌ZnAl2O4是被用于紫外线装置、宇宙飞船、抗热涂层和陶瓷及催化剂材料一种有名的宽带间隔混合物半导体。描述了单阶段工艺合成的发展及在低温下生长的ZnAl2O4尖晶石,报道了三元氧化材料新型、经济及自然生长的大量结晶。ZnAl2O4结晶在室温(30℃)下生长。与金属结合的单晶生成的材料被做为初级粒子并被放入作为反应加速试剂(催化剂)及有金属薄片的溶液(阳离子清除剂)及含有酸性物的中性溶池中。铝酸锌结晶在平均周期15天内,在最佳条件下,采用化学溶池在单幅工序下生长。结晶和六方晶面一起生长并且采用XRD测量确认单晶的生长。元素(Zn、Al、O)和化学成份的性能采用EDAX来进行检测。人们发现此项技术对于三元氧化材料大量单晶的生长是有益的低成本技术。
Zinc aluminate ZnAl2O4 is a well-known broadband-gap-mixture semiconductor used in UV installations, spacecraft, thermal-resistant coatings and ceramic and catalyst materials. Described the development of single-stage process synthesis and the growth of ZnAl2O4 spinel at low temperatures, reported a large number of new, economical and naturally occurring large amounts of crystalline ternary oxide materials. ZnAl2O4 crystals grow at room temperature (30 ° C). The single crystal-bonded material combined with the metal was used as primary particles and placed in a solution (cation scavenger) as a reaction-accelerating agent (catalyst) and a metal flake and a neutral bath containing an acidic substance. The zinc aluminate crystals were grown in a single step using a chemical bath under the optimal conditions within an average period of 15 days. Crystals and hexagonal planes grow together and XRD measurements confirm the growth of single crystals. The elemental (Zn, Al, O) and chemical composition properties were tested using EDAX. It has been found that this technique is a low cost technique that is beneficial for the growth of a large number of single crystals of ternary oxide material.