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对电荷耦合器件(CCD)硅基底的光照能量分布进行了建模分析和实验研究。使用原子力显微镜和扫描电子显微镜获取了CCD的关键光学参数,即微透镜表面函数和二氧化硅增厚层厚度。模拟了垂直入射平面光在硅基底表面的能量分布,并与飞秒激光辐照损伤CCD的实验图像进行了比对,二者吻合良好。研究结果表明,微透镜与二氧化硅增厚层的共同作用使得激光能量几乎完全辐照在感光区,激光能量呈哑铃形分布。
The light energy distribution of charge-coupled device (CCD) silicon substrate was modeled and analyzed experimentally. The key optical parameters of the CCD are acquired using atomic force microscopy and scanning electron microscopy, namely the micro-lens surface function and the thickness of the silica thickened layer. The energy distribution of perpendicular incident plane light on the surface of silicon substrate was simulated and compared with the experimental image of the damaged CCD irradiated by femtosecond laser. The two agree well with each other. The results show that the micro-lens and silica thickened layer make the laser energy almost completely irradiated in the photosensitive area, the laser energy was dumbbell-shaped distribution.