【摘 要】
：
We report the superconductivity of a new quaternary compound ThMo2Si2C,synthesized with the arc-melting technique.The compound crystallizes in a tetragonal CeCr2Si2C-type structure with cell parameters of a = 4.2296 ? and c = 5.3571 ?.An interlayer Si-Si
【机 构】
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School of Physics and Optoelectronic Engineering,Shandong University of Technology,Zibo 255000,China
【出 处】
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中国科学：物理学 力学 天文学（英文版）
论文部分内容阅读
We report the superconductivity of a new quaternary compound ThMo2Si2C,synthesized with the arc-melting technique.The compound crystallizes in a tetragonal CeCr2Si2C-type structure with cell parameters of a = 4.2296 ? and c = 5.3571 ?.An interlayer Si-Si covalent bonding is suggested by the atomic distance.The electrical resistivity and magnetic susceptibility mea-surements indicate a Pauli-paramagnetic metal with dominant electron-electron scattering in the normal-state.Bulk supercon-ductivity at 2.2 K is demonstrated with a dimensionless specific-heat jump of ΔC/γnT = 0.98.The superconducting parameters of the critical magnetic fields,coherence length,penetration depth,and superconducting energy gap are given.
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