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采用金属有机化学气相沉积(MOCVD)法在蓝宝石衬底上高温外延生长高温Al N外延层,着重研究Al化蓝宝石衬底的时间对样品的结构、形貌和面内应变等产生的影响。采用原位监测系统监测外延生长过程、扫描电子显微镜(SEM)表征样品的表面形貌、X线衍射(XRD)分析样品的晶体质量与残余应变。结果表明:适当的Al化衬底可以使高温Al N外延层表面更加平整,面内应变得到部分释放,但是Al化衬底会引起外延层的结晶质量变差。
High temperature Al N epitaxial layer was epitaxially grown on sapphire substrate by MOCVD. The effect of the time of Al sapphire substrate on the structure, morphology and in-plane strain of the sample was investigated. The in-situ monitoring system was used to monitor the epitaxial growth process. The surface morphology of the samples was characterized by scanning electron microscopy (SEM) and the crystal quality and residual strain were analyzed by X-ray diffraction. The results show that the appropriate Al substrate can make the surface of high temperature AlN epitaxial layer more flat and the in-plane strain can be partially released. However, the Al-base substrate will cause the deterioration of the crystalline quality of the epitaxial layer.