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在有效质量近似下,考察了一个特殊量子点量子阱体系中的电子与空穴束缚态能级结构,以CdS/HgS和ZnS/CdSe构成的量子点量子阱为例进行了数值计算。结果显示,束缚态的本征能量对量子点量子阱的尺寸依赖曲线存在一些拐点,这一结果与均匀量子点体系明显不同;对某个固定的量子点量子阱结构,随量子数n的增加,CdS/HgS量子点量子阱体系中的束缚电子态的能级间隔不是单调增加的,在某些量子数n处存在峰值,而ZnS/CdSe量子点量子阱体系中的空穴束缚态的能级间隔则是单调增加的,这是由构成量子点量子阱的材料的有效质量比率不同造成的。
In the approximation of the effective mass, the electron and hole bound state energy levels in a specific quantum dot quantum well system are investigated. The quantum well quantum dots made up of CdS / HgS and ZnS / CdSe are taken as examples. The results show that the intrinsic energy of the bound state has some inflection points on the size dependence curve of the quantum dot quantum well, which is obviously different from the uniform quantum dot system. For a fixed quantum dot quantum well structure, with the increase of the quantum number n , The energy level spacing of the bound electronic states in the CdS / HgS quantum dot quantum well system does not monotonically increase, and peaks exist at some quantum numbers n, while the hole bound states in the ZnS / CdSe quantum dot quantum well system The interstage increases monotonically due to the difference in the effective mass ratio of the materials that make up the quantum dot quantum wells.