【摘 要】
:
This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time,
【机 构】
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MicroelectronicsCenterSoutheastUniversity,Nanjing210018,ThePlanningCommitteeofHefeiCity,Hefei230061
【出 处】
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Journal of Electronics(China)