,Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO2

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We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a γ-LiAlO,2 (100) substrate. The TMGa, TMIn and NH,3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10×10/μm2 by AFM scan area. The XRD spectra show that the materials grown on γ-LiAlO,2 (100) have 1-100 m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the γ-LiAlO,2 substrate is indeed free of inteal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a tu on voltage of 1-3V.
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