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双结p+/n-well/p-sub光电二极管由于其较高灵敏度、低暗电流而成为荧光检测光电传感单元的最佳选择。文章基于0.5μm CMOS工艺对双结p+/n-well/p-sub光电二极管进行了版图优化设计,有效减少了硅和二氧化硅界面对光电二极管光吸收区暗电流的影响。流片后测试表明优化后版图面积为100μm×100μm,双结p+/n-well/p-sub光电二极管单元的暗电流从11pA减小到了6.5pA,光电流从2.15nA稍有减弱到2.05nA,光暗电流比值提高了60%。优化后的双结p+/n-well/p-sub光电二极管更适用于对微弱的荧光信号检测。
Dual-junction p + / n-well / p-sub photodiodes are the best choice for fluorescence detection of photoconductive cells due to their higher sensitivity and lower dark current. Based on the 0.5μm CMOS process, a bipolar p + / n-well / p-sub photodiode has been optimized in layout, which can effectively reduce the influence of silicon and silicon dioxide on the dark current in photodiode. The post-flow test showed that the optimized layout area was 100μm × 100μm, the dark current of double junction p + / n-well / p-sub photodiode decreased from 11pA to 6.5pA, and the photocurrent weakened slightly from 2.15nA to 2.05nA , Dark current ratio increased by 60%. Optimized double junction p + / n-well / p-sub photodiode is more suitable for weak fluorescence signal detection.