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人们发现,在高温下氨气中进行SiO_2的热氮化,可以形成有用的薄栅绝缘物,具有热氮化SiO_2膜的MOS二极管的界面特性明显地受氮化条件的影响。在900℃左右,由于氨气分介产生氢气使原来SiO_2膜的性质发生变化导致了平带电压有一个负的漂移,大于1100℃氮化时,得到一个极好的MOS二极管特性,避免了由原先介质击穿所产生的高电场不稳定性。在硅的间隙中央和绝缘物中的电荷可以忽略的情况下,获得了低于10~(10)cm~(-2)电子伏~(-1)的表面态密度。在SiO_2膜上形成一个防止沾污的高势垒。甚至于采用钠沾污栅,MOS二极管的可动离子密度
It has been found that the thermal nitriding of SiO 2 in ammonia at high temperature can form a useful thin gate insulator and the interfacial properties of the MOS diode with a thermal nitride SiO 2 film are significantly affected by the nitridation conditions. At about 900 ℃, due to the ammonia gas separation of hydrogen to make the original nature of the SiO 2 film changes have led to the flat band voltage has a negative drift, greater than 1100 ℃ when nitriding, get an excellent MOS diode characteristics, to avoid by the The original dielectric breakdown caused by the high electric field instability. With the negligible charge in the center of the silicon gap and in the insulator, surface state densities of less than 10 ~ (10) cm ~ (-2) eV ~ (-1) were obtained. A high barrier to prevent contamination is formed on the SiO 2 film. Even with sodium contamination grid, the movable diode density of the MOS diode