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由于GaInAs材料具有高的电子迁移率及高的电子漂移速度,且易于与InP实现良好的晶格匹配,并在InP-GaInAs界面具有二维电子气效应,已成为人们十分感兴趣的新材料.在许多制备GaInAs外延材料的方法中,MBE与MOCVD设备昂贵;液相外延在薄层与纯度外延方面比较困难,且不具备生产能力;近几年研究较多的是卤化物体系的汽相外延.众所周知,三元汽相外延的主要缺点是难以控制组分,通常采用双室法及氢化物体系的单室法.但两者在设备及安全上都有一些固有的缺点.本工作描述了一种汽相外延GaInAs的新技术,它是在AsCl_3/Ga/In/H_2体系中,采用Ga/In合金源汽相生长GaInAs.根据热力学计算,可得到Ga_xIn_(1-x)As中Ga、In组分比x/1-x的表达式:
Since GaInAs materials have high electron mobility and high electron drift speed and are easy to get good lattice matching with InP and have two-dimensional electron gas effect at InP-GaInAs interface, it has become a new material of great interest. MBE and MOCVD equipment are expensive in many methods for preparing GaInAs epitaxial materials; liquid phase epitaxy is more difficult to do with thin layer and purity epitaxy, and does not have the production capacity; in recent years, more research is the vapor phase epitaxy of halide systems It is well known that the major drawback of ternary vapor phase epitaxy is the difficulty of controlling the composition, usually using the single-chamber method of the double chamber method and the hydride system, but both have some inherent disadvantages in terms of equipment and safety.This work describes A new technique for vapor phase epitaxy of GaInAs is to vapor-phase grow GaInAs in a AsCl_3 / Ga / In / H_2 system using a Ga / In alloy. According to the thermodynamic calculation, Ga, In composition ratio x / 1-x expression: