论文部分内容阅读
采用离子注入、离子淀积及后期退火方法制各了稀磁半导体单晶MnxGa1-xSb,在室温下(300 K)获得了单晶的磁滞回线.用X射线衍射方法分析了铁磁性半导体单晶MnxGa1-xSb的结构,用电化学C-V法分析了单晶的载流子浓度分布.由X射线衍射得知,MnxGa1-xSb中Mn含量逐渐由近表面处的x=0.09下降到晶片内部的x=0.电化学C-V测得单晶的空穴浓度高达1×1021cm-3,表明MnxGa1-xSb单晶中大部分Mn原子占据Ga位,起受主作用.
Single-crystal magnetic hysteresis loop was obtained at room temperature (300 K) by ion implantation, ion-deposition and post-annealing method. The ferromagnetic semiconductors The structure of single crystal MnxGa1-xSb was analyzed by electrochemical CV, and the content of Mn in MnxGa1-xSb was gradually decreased from x = 0.09 at the near surface to the inside of the wafer by X-ray diffraction X = 0. Electrochemical CV measured single-crystal hole concentration as high as 1 × 1021cm-3, indicating that MnxGa1-xSb most of the Mn atoms occupy the Ga-site, played a major role.