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对应用在不同辐射环境下HP4156半导体参数自动化在线测试系统以及脉冲总剂量效应在线测 试系统进行了详细的介绍,说明其工作原理和技术指标,并利用这两套测试系统对典型CMOS器件 4007在强光一号加速器脉冲硬X射线状态、长脉冲γ射线状态以及60Co稳态γ射线状态下开展了不同 辐射环境总剂量损伤效应的比较研究,为今后深入进行此项工作打下了基础．
The application of HP4156 semiconductor parameter automatic on-line test system and the pulse total dose effect on-line test system under different radiation environment are introduced in detail. The working principle and technical indexes of HP4156 semi-conductor are described in detail. By using these two test systems, The comparative research on the total dose damage effects of different radiation environment under the pulse X-ray pulse state, the long pulse γ ray state and the 60Co steady-state γ-ray state of the light accelerator No. 1 laid the foundation for further work in this field.