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用半导体P—n结把电流转换成光的器件总称为发光二极管。因此它包括通常的自然光发光二极管,激光二极管以及具有电、光开关性能(P—n—P—n结构)的二极管等。发光二极管材料主要有GaAs,GaP,Ga(As,P),(Ga,Al)As等。其中有的已有商品。除此之外,正在研究(Ga,In)P,GaN,SiC等其他材料。本文介绍了用典型的发光材料制成的一般发光二极管。做为发光二极管的特性,首要的问题是发光效率,对可见发光二极
Devices that convert current to light using semiconductor P-n junctions are collectively referred to as light-emitting diodes. It therefore includes the usual natural light-emitting diodes, laser diodes and diodes with electrical and optical switching properties (P-n-P-n structure). Light-emitting diode materials are mainly GaAs, GaP, Ga (As, P), (Ga, Al) As and so on. Some of them already have products. In addition, other materials such as (Ga, In) P, GaN and SiC are being studied. This article describes a typical light-emitting diode made of light-emitting diodes. As the characteristics of light-emitting diodes, the most important issue is the luminous efficiency, visible light-emitting diode